2SD1611 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

SMD Type
Features
High forward current transfer ratio hFE
High collector-base voltage (Emitter open) VCBO
Internal Connection
Transistors
Product specification
2SD1611
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Ta = 25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
500
V
VCEO
400
V
VEBO
5
V
IC
6
A
ICP
10
A
40
A
PC
1.3
W
Tj
150
Tstg
-55 to +150
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