2SD1513 Datasheet, PDF (1/1 Pages) NEC – Driver and output stages of audio frequency amplifiers

Product specification
TO-92 Plastic-Encapsulate Transistors
2SD1513 TRANSISTOR (NPN)
FEATURES
z Low Collector Saturation
z High DC Current Gain
z Complementary to The 2SB1068 PNP Transistor
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
16
6
2
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_CE(sat)(3)
V_{BE (sat)}
V_BE
C_ob
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=16V,I_E=0
V_EB=6V,I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1.5A
I_C=1A,I_B=10mA
I_C=1.5A,I_B=20mA
I_C=1.5A,I_B=75mA
I_C=1.5mA,I_B=75mA
V_CE=6V, I_C=5mA
V_CB=10V,I_E=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
20
V
16
V
6
V
0.1
μA
0.1
μA
135
650
100
0.4
V
0.5
V
0.5
V
1.2
V
0.55
0.65
V
28
pF
100
MHz
CLASSIFICATION OF h_FE（₁）
RANK
L
RANGE
135-270
K
200-400
U
300-650
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