2SD1468 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Product specification
TO-92 Plastic-Encapsulate Transistors
2SD1468 TRANSISTOR (NPN)
FEATURES
z Low saturation voltage
z Ideal for low voltage, high current dribes
z High DC current gain and high current
TO-92
1. EMITTER
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
Unit
30
V
15
V
5
V
1
A
625
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=4V, I_C=0
h_FE
V_CE=3V, I_C=100mA
V_CE(sat) I_C=500mA, I_B=50mA
f_T
V_CE=5V, I_C=50mA, f=100MHz
C_ob
V_CB=10V, I_E=0, f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
Q
120-270
R
180-390
Min Typ
30
15
5
120
50
Max Unit
V
V
V
0.5
μA
0.5
μA
560
0.4
V
MHz
30
pF
S
270-560
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