2SD1420 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
Features
Low frequency power amplifier
Transistors
Product specification
2SD1420
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 PW 10ms, duty cycle 20%
Symbol
Rating
Unit
VCBO
180
V
VCEO
120
V
VEBO
5
V
IC
1.5
A
iC(peak)*1
3
A
PC*2
1
W
Tj
150
Tstg
-55 to 150
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
Base to emitter voltage
VCE(sat)
VBE
Testconditons
IC = 1 mA, IE = 0
IC = 10mA, RBE =
IE= 1mA, IC = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 0.15A
VCE = 5 V, IC = 0.5A
IC = 0.5A, IB = 50 mA,pulse
VCE = 5 V, IC = 0.15mA,pulse
hFE Classification
Marking
hFE
EA
60 120
EB
100 200
EC
160 320
Min Typ Max Unit
180
V
120
V
5
V
10 ìA
60
320
30
1.0 V
0.9 V
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