2SD1419 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
Features
Low frequency power amplifier
Product specification
2SD1419
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 PW 10ms, duty cycle 20%
Symbol
Rating
Unit
VCBO
120
V
VCEO
100
V
VEBO
5
V
IC
1
A
iC(peak)*1
2
A
PC*2
1
W
Tj
150
Tstg
-55 to 150
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
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