2SD1418 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
Features
Low frequency power amplifier.
Transistors
Product specification
2SD1418
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
120
V
VCEO
80
V
VEBO
5
V
IC
1
A
ICP *1
2
A
PC *2
1
W
Tj
150
Tstg
-55 to +150
*1. PW 10 ms; d 0.02.
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min Typ Max Unit
V(BR)CBO IC = 10 ìA, IE = 0
120
V
V(BR)CEO IC = 1 mA, RBE =
80
V
V(BR)EBO IE = 10 ìA, IC = 0
5
V
ICBO VCB = 100 V, IE = 0
10 ìA
hFE VCE = 5 V,IC = 150 mA
60
320
VCE(sat) IC = 500 mA,IB = 50 mA
1
V
VBE VCE = 5 V,IC = 150 mA
1.5 V
fT VCE = 5 V,IC = 150 mA
140
MHz
Cob VCB = 10 V, IE = 0,f = 1 MHz
12
pF
hFE Classification
Marking
Rank
hFE
A
60 120
D
B
100 200
C
160 320
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