2SD1366A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

■ Features
● Low frequency power amplifier
Product specification
2SD1366A
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Total power dissipation
PC*
Junction temperature
Tj
Storage temperature
Tstg
* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Rating
30
25
5
1
1
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Output Capacitance
■ hFE Classification
Marking
hFE
AC
82～180
AD
120～240
Symbol
Test conditons
V(BR)CBO IC = 10 μA, IE = 0
V(BR)CEO IC = 1 mA, IB = 0
V(BR)EBO IE = 10 μA, IC = 0
ICBO VCB = 250V,IB=0
IEBO VEB = 4 V, IC = 0
hFE VCE =2V,Ic=500mA
VCE(sat) IC = 0.8 A, IB = 80mA
VBE(sat) IC = 0.8 A, IB = 80mA
fT VCE = 2V ,Ic=500mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Unit
V
V
V
A
W
℃
℃
Min Typ Max Unit
30
V
25
V
5
V
0.1 μA
0.1 μA
85
240
0.3 V
1
V
240
MHz
22
pF
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