2SD1328 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

SMD Type
TransistIoCrs
Product specification
2SD1328
Features
Low ON resistance Ron.
Low collector-emitter saturation voltage VCE(sat).
High foward current transfer ratio hFE.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
25
V
VCEO
20
V
VEBO
12
V
IC
1
A
ICP
0.5
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 25 V, IE = 0
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
hFE VCE = 2 V, IC = 0.5 A
VCE(sat) IC = 0.5 A, IB = 20 mA
VBE(sat) IC = 0.5 A, IB = 50 mA
fT VCB = 10 V, IE = -50 mA , f = 200 MHz
Cob VCB = 10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
100 nA
25
V
20
V
12
V
200
800
0.13 0.4 V
1.2 V
200
MHz
10
pF
ON resistanse
Ron
1.0
Ù
hFE Classification
Marking
Rank
hFE
R
200 350
1D
S
300 500
T
400 800
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