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| 2SD1271A Datasheet, PDF (1/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Transistors | |||
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Product specification
TO-220F Plastic-Encapsulate Transistors
2SD1271A TRANSISTOR (NPN)
FEATURES
z Low Collector to Emitter Saturation Voltage VCE(sat)
z Satisfactory Linearity of Forward Current Transfer Ratio hFE
z Large Collector Current
TO â 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
150
100
7
7
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=100µA,IE=0
150
V
V(BR)CEO IC=10mA,IB=0
100
V
V(BR)EBO IE=100µA,IC=0
7
V
ICBO
VCB=100V,IE=0
10
μA
IEBO
VEB=5V,IC=0
50
μA
hFE(1)
VCE=2V, IC=0.1A
45
hFE(2)
VCE=2V, IC=3A
60
260
VCE(sat) IC=5A,IB=250mA
0.5
V
VBE (sat) IC=5A,IB=250mA
1.5
V
fT
VCE=10V,IC=0.5A, f=10MHz
30
MHz
CLASSIFICATION OF hFE (2)
RANK
R
RANGE
60-120
Q
90-180
P
130-260
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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