2SD1259 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

SMD Type
Transistors
Product specification
2SD1259;2SD1259A
Features
High forward current transfer ratio hFE.
Satisfactory linearity of forward current transfer ratio hFE.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1259
80
V
VCBO
2SD1259A
100
V
Collector-emitter voltage
2SD1259
60
V
VCEO
2SD1259A
80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Base current
IB
1
A
Collector power dissipation Ta = 25
1.3
W
PC
40
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
2SD1259
2SD1259A
Collector-base cutoff current
2SD1259
2SD1259A
Collector-emitter cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCEO IC = 25 mA, IB = 0
ICBO
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
ICEO VCE = 40 V, IB = 0
IEBO VEB = 6 V, IC = 0
hFE VCE = 4 V, IC = 0.5 A
VCE(sat) IC = 2 A, IB = 0.05 A
fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
60
V
80
V
100 ìA
100 ìA
100 ìA
100 ìA
500
2500
1.0 V
50
MHz
hFE Classification
Rank
hFE
Q
500 1000
P
800 1500
O
1200 2500
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