2SD1257 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For power switching)

SMD Type
Transistors
Product specification
2SD1257,2SD1257A
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1257
130
V
VCBO
2SD1257A
150
V
Collector-emitter voltage
2SD1257
80
V
VCEO
2SD1257A
100
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
7
A
Peak collector current
ICP
15
A
Collector power dissipation Ta = 25
1.3
W
PC
40
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2