2SD1256 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For power switching)

SMD Type
Transistors
Product specification
2SD1256
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Ta = 25
Collector power dissipation
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
130
V
VCEO
80
V
VEBO
7
V
IC
5
A
ICP
10
A
1.3
W
PC
40
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
Testconditons
VCEO IC = 10mA, IB = 0
ICBO VCB = 100 V,IE = 0
IEBO VEB = 5 V, IC = 0
VCE = 2 V, IC = 2 A
hFE
VCE = 2 V, IC = 0.1 A
VCE(sat) IC = 2 A, IB = 0.2 A
VBE(sat) IC = 2 A, IB = 0.2 A
fT VCE = 10 V, IC = 0.5 A , f = 10 MHz
ton
tstg IC = 2 A,IB1 = -IB2 = 0.2 A, VCC = 50 V
tf
Min Typ Max Unit
80
V
10 ìA
50 ìA
90
260
45
0.5 V
1.5 V
30
MHz
0.5
ìs
1.5
ìs
0.15
ìs
hFE Classification
Rank
hFE
Q
90 180
P
130 260
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