2SD1250 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

SMD Type
TransistIoCrs
Product specification
2SD1250
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
TC = 25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
200
V
VCEO
150
V
VEBO
6
V
IC
2
A
ICP
3
1.3
W
PC
30
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
hFE Classification
Rank
hFE
Q
60 to 140
P
100 to 240
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VBE
VCE(sat)
fT
Testconditons
IC = 500 ìA, IE = 0
IC =5 mA, IB = 0
IE = 500 ìA, IC = 0
VCB = 200 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 400 mA
VCE = 10 V, IC = 400 mA
IC = 500 mA, IB = 50 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
Min Typ Max Unit
200
V
150
V
6
V
50 ìA
50 ìA
60
240
50
1.0 V
1.0 V
20
MHz
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