2SD1048 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistors

SMD Type
TransistIoCrs
Product specification
2SD1048
Features
Ultrasmall package allows miniaturization in end products.
Large current capacity (IC=0.7A) and low-saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
15
V
VEBO
5
V
IC
0.7
A
ICP
1.5
A
PC
200
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Symbol
Testconditons
IcBO VCB = 15V , IE = 0
IEBO VEB = 4V , IC = 0
hFE VCE = 2V , IC = 50mA
fT VCE = 10V , IC = 50mA
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 5mA , IB = 0.5mA
VCE(sat) IC = 100mA , IB = 10mA
hFE Classification
Marking
hFE
X6
200 400
X7
300 600
X8
450 900
Min Typ Max Unit
0.1 ìA
0.1 ìA
200
900
250
MHz
8
pF
10 25 mV
30 80 mV
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