2SD1005 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
TransistIoCrs
Product specification
2SD1005
Features
World standard miniature package: SOT-89.
High collector to base voltage: VCBO 100V.
Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse) *
IC
1.5
A
Total power dissipation
at 25 ambient temperature *
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1. PW 10ìs,duty cycle 50%
*2. When mounted on ceramic substrate of 16cm² X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
BW
90 180
BV
135 270
Symbol
Testconditons
ICBO VCB = 100V, IE=0
IEBO VEB = 5V, IC=0
VCE =2V , IC = 100mA
hFE
VCE =2V , IC = 500mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
VBE VCE =10V , IC = 10mA
fT VCE = 5V , IE = -10mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
BU
200 400
Min Typ Max Unit
100 nA
100 nA
90 200 400
25 80
0.15 0.5 V
0.9 1.5 V
600 630 700 mV
160
MHz
12
pF
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