2SD1001 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
Features
World standard miniature package:SOT-89.
High collector-emitter voltage.
TransistIoCrs
Product specification
2SD1001
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
300
mA
Collector Current (pulse) *
IC
500
mA
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW 10ms, Duty Cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
EM
90 180
EL
135 270
Symbol
Testconditons
ICBO VCB = 80 V, IE = 0 A
IEBO VEB = 5.0 V, IC = 0 A
VCE = 1.0 V, IC = 50 mA
hFE
VCE = 2.0 V, IC = 300 mA
VCE(sat) IC = 300 mA, IB = 30 mA
VBE(sat) IC = 300 mA, IB = 30 mA
VBE VCE = 6.0 V, IC = 10 mA
fT VCE = 6.0 V, IE = -10 mA
Cob VCB = 6 V, IE = 0, f = 1.0 MHz
EK
200 400
Min Typ Max Unit
100 nA
100 nA
90 200 400
30 80
0.15 0.6 V
0.86 1.2 V
600 645 700 mV
140
MHz
70
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1