2SC945 Datasheet, PDF (1/2 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching)

Product specification
2SC945
■ Features
● Collector current up to 150mA
● High hFE linearity
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
PC
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Collector to base capacitance
Noise figure
Transition frequency
Symbol
Testconditons
Min Typ Max Unit
V(BR)CBO IC=100 μA, IE=0
60
V
V(BR)CEO IC=1mA , IB=0
50
V
V(BR)EBO IE=100 μA, IC=0
5
V
ICBO VCB = 60V, IE = 0
0.1 μA
IEBO VEB = 5.0 V, IC = 0
0.1 μA
VCE = 6.0V, IC =1.0mA
hFE
VCE = 6.0V, IC =0.1mA
130
400
40
VCE(sat) IC=100mA,IB=10mA
0.3 V
VBE(sat) IC=100mA,IB=10mA
1.0 V
Cob VCB = 10 V, IE = 0 , f = 1 MHz
3.0 pF
NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ
4 10 dB
fT
VCE=6V,IC=10mA,f =30 MHz
150
MHz
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