2SC5585 Datasheet, PDF (1/1 Pages) Rohm – Low frequency transistor (12V, 0.5A)

SMD Type
TransistIoCrs
Product specification
2SC5585
Features
Hig current.
Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
15
12
6
500
150
150
-55 to +125
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
cob
fT
Testconditons
IC = 10 A
IC = 1mA
IE = 10 A
VCB=15 V
VEB= 6 V
VCE= 2 V, IC = 10mA
IC=200mA,IB=10mA
VCB=10V,IE=0,f=1MHz
VCE = 2V, IE =-10mA,f=100MHz
Min Typ Max Unit
15
V
12
V
6
V
100 nA
100 nA
270
680
90 250 mV
7.5
pF
320
MHz
Marking
Marking
BX
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