2SC5457 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Product specification
2SC5457
Features
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation TC = 25
Ta = 25
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Rating
Unit
500
V
500
V
400
V
7
V
6
A
3
A
1.2
A
30
W
1
150
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Testconditons
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A,
VCC = 200V
Min Typ Max Unit
100 ìA
100 ìA
400
V
10
V
8
40
1
1.5 V
10
MHz
1.0
3.0 ìs
0.3
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