2SC5310 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistors

SMD Type
TransistIoCrs
Product specification
2SC5310
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation *
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
6
V
IC
1
A
ICP
3
A
IB
200
mA
PC
250
mW
Tj
150
Tstg
-55 to +150
* Mounted on a glass-epoxy board (20×30×1.6mm)
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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