2SC5287 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Product specification
TO-3P Plastic-Encapsulate Transistors
2SC5287 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Speed Switching
APPLICATIONS
z For Switching Regulator and General Purpose Applications
TO – 3P
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
T_C=25℃
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
900
550
7
5
80
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)*
V_BE
*
(sat)
C_ob
f_T
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=800V,I_E=0
V_EB=7V,I_C=0
V_CE=4V, I_C=1.8A
I_C=1.8A,I_B=0.36A
I_C=1.8A,I_B=0.36A
V_CB=10V,I_E=0, f=1MHz
VCE=12V,IC=0.35A
Min Typ Max Unit
900
V
550
V
7
V
100
μA
100
μA
10
25
0.5
V
1.2
V
50
pF
6
MHz
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