2SC5214 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – For Low Frequency Amplify Application Silicon Npn Epitaxial Type

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Features
High fT fT=100MHz typ.
Excellent linearity of dc forward current gain.
High collector current ICM=1.5A.
Small package for mounting.
TransistIoCrs
Product specification
2SC5214
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VEBO
4
V
VCEO
25
V
ICM
1.5
A
IC
1
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V(BR)CEO IC=100ìA,RBE=
ICBO VCB=25V,IE=0
IEBO VEB=2V,IC=0
hFE VCE=1V,IC=500mA
VCE(sat) IC=500mA,IB=25mA
fT VCE=6V,IE=-10mA
hFE Classification
Marking
hFE
WC
55 110
WD
90 180
WE
150 300
Min Typ Max Unit
30
V
4
V
25
V
1 ìA
1 ìA
55
300
0.5 V
100
MHz
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