2SC5212 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE

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Product specification
2SC5212
Features
Low collector saturation voltage VCE(sat)=0.2V typ.
High fT fT=180MHz typ.
Excellent linearity of dc forward current gain.
High collector current ICM=1A.
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
25
V
VEBO
4
V
VCEO
20
V
ICM
1
A
IC
700
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V(BR)CEO IC=100ìA,RBE=
ICBO VCB=25V,IE=0
IEBO VEB=2V,IC=0
hFE VCE=4V,IC=100mA
VCE(sat) IC=500mA,IB=25mA
fT VCE=6V,IE=-10mA
hFE Classification
Marking
hFE
UE
150 300
UF
250 500
UG
400 800
Min Typ Max Unit
25
V
4
V
20
V
1 ìA
1 ìA
150
800
0.2 0.5 V
180
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
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