2SC5211 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – SILICON NPN TRANSISOR

S^SM^MD^D T^Ty^yp^pe^e
Features
High voltage VCEO=50V.
Small package for mounting.
TransistIoCrs
Product specification
2SC5211
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
55
V
VEBO
4
V
VCEO
50
V
ICM
600
mA
IC
400
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V(BR)CEO IC=100ìA,RBE=
ICBO VCB=25V,IE=0
IEBO VEB=2V,IC=0
hFE VCE=4V,IC=100mA
VCE(sat) IC=200mA,IB=10mA
fT VCE=6V,IE=-10mA
Min Typ Max Unit
55
V
4
V
50
V
1 ìA
1 ìA
90
500
0.15 0.5 V
150
MHz
hFE Classification
Marking
hFE
TD
90 180
TE
150 300
TF
250 500
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1