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| 2SC5198 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |||
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Product specification
TO-3P Plastic-Encapsulate Transistors
2SC5198 TRANSISTOR (NPN)
FEATURES
z Low Collector Saturation Voltage
z Good Linearity of hFE
TO â 3P
1. BASE
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Power Amplifier Applications
z Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
TC=25â
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
140
140
5
10
100
36
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=1mA,IE=0
140
V
Collector-emitter breakdown voltage
V(BR)CEO IC=50mA,IB=0
140
V
Emitter-base breakdown voltage
V(BR)EBO IE=1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=140V,IE=0
5
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
5
μA
DC current gain
hFE(1)
VCE=5V, IC=1A
55
160
hFE(2)
VCE=5V, IC=5A
35
Collector-emitter saturation voltage
VCE(sat)
IC=7A,IB=0.7A
2
V
Base-emitter voltage
VBE
VCE=5V, IC=5A
1.5
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
170
pF
Transition frequency
fT
VCE=5V,IC=1A
30
MHz
CLASSIFICATION OF hFE (1)
RANK
RANGE
R
55-110
O
80-160
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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