2SC4942 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

SMD Type
Transistors
Product specification
2SC4942
Features
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
*1 PW 10 ms, duty cycle 50 %
*2 7.5 cm² X 0.7 mm ceramic board mounted
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VCBO
600
V
VCEO
600
V
VEBO
7
V
ID(DC)
1
A
ID(pulse) *1
2
A
PT *2
2
W
Tj
150
Tstg
-55 to 150
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
tON
tstg
tf
Testconditons
VCB = 600 V, IE = 0
VEB = 7.0 V, IC = 0
VCE = 5.0 V, IC = 0.1 A
VCE = 5.0 V, IC = 0.5 A
IC = 400 mV, IB = 80 mA
IC = 400 mV, IB = 80 mA
VCE = 5.0 V, IE = ?50 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 0.5 A, VCC= 250 V
IB1 = ?IB2 = 0.1 A
RL = 500Ù
Min Typ Max Unit
10 ìA
10 ìA
30 55 120
5 10
0.35 1.0 V
0.9 1.2 V
30
MHz
15
pF
0.1 0.5 ìs
4.0 5.0 ìs
0.2 0.5 ìs
hFE Classification
Marking
hFE
AA1
30 to 60
AA2
40 to 80
AA3
60 to120
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