2SC4783 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR

Product specification
2SC4783
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
Collector Current (pulse) ^Note1
Total Power Dissipation (TA = 25°C) ^Note2
IC(DC)
IC(pulse)
PT
100
mA
200
mA
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm² x 0.64 mm
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1
+0.1
–0.05
3
2
1
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
1: Emitter
2: Base
3: Collector
0 to 0.1
0.6
0.75 ± 0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO
VCB = 60 V, IE = 0
Emitter Cut-off Current
DC Current Gain ^Note
IEBO
VEB = 5.0 V, IC = 0
hFE1 VCE = 6.0 V, IC = 0.1 mA
Base to Emitter Voltage ^Note
Collector Saturation Voltage ^Note
Base Saturation Voltage ^Note
hFE2
VBE
VCE(sat)
VBE(sat)
VCE = 6.0 V, IC = 1.0 mA
VCE = 6.0 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
fT
VCE = 6.0 V, IE = −10 mA
Output Capacitance
Cob
VCE = 6.0 V, IE = 0, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
MIN. TYP. MAX. UNIT
100 nA
100 nA
50
−
90 200 600 −
0.62
V
0.15 0.3 V
0.86 1.0 V
150 250
MHz
3.0 4.0 pF
hFE CLASSFICATION
Marking
L4
hFE2
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
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