2SC4738 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

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IC
Product specification
2SC4738
Features
High voltage and high current:VCE=50V,IC=150mA(Max.)
Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
High hFE: =120 to 700
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
150
30
100
125
-55 to +125
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
ICBO
IEBO
hFE
VCE(sat)
cob
fT
Testconditons
VCB=60 V, IE= 0
VEB= 5 V, IC = 0
VCE= 6 V, IC = 2 mA
IC=100mA,IB=10mA
VCB=10V,IE=0,f=1MHz
VCE = 10V, IC = 1mA
Min Typ Max Unit
0.1
A
0.1
A
120
700
0.1 0.25 V
2.0 3.5 pF
80
MHz
hFE Classification
Marking
Rank
hFE
LY
Y
120 240
LGR
GR
200 400
LBL
BL
350 700
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