2SC4684 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

SMD Type
SMD Type
Transistors
TransistIoCrs
Product specification
2SC4684
Features
High DC current gain.
Low collector saturation voltage.
High power dissipation.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Base current
Collector power dissipation
Junction temperature
Storage temperature
Ta = 25
Tc = 25
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VCES
40
V
VEBO
8
V
IC
5
A
ICP
8
A
IB
0.5
A
1.0
W
PC
10
W
Tj
150
Tstg
-55 to +150
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 8 V, IC = 0
VCEO IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 4 A
VCE (sat) IC = 4 A, IB = 40 mA
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
100 nA
100 nA
20
V
800
3200
250
0.5 V
1.2 V
150
MHz
45
pF
Marking
Marking
C4684
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