2SC4618 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN General Purpose Transistor

■ Features
● Low collector capacitance.
● Low rbb, high gain, and excellent noise characteristics.
Product specification
2SC4618
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
40
25
5
50
0.15
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
■ Marking
Marking
AN
AP
Symbol
Test conditons
BVCBO IC=50μA
BVCEO IC=1mA
BVEBO IE=50μA
ICBO VCB=24V
IEBO VEB=3V
VCE(sat) IC/IB=10mA/1mA
hFE VCE=6V, IC=1mA
fT VCE=6V, IE=-1mA, f=100MHz
Cob VCE=6V, IE=0A, f=1MHz
AQ
Unit
V
V
V
mA
W
℃
℃
Min Typ Max Unit
40
V
25
V
5
V
0.5 μA
0.5 μA
0.3 V
82
180
300
MHz
1.3 2.2 pF
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