2SC4577 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
TransistIoCrs
Product specification
2SC4577
Features
Low collector-to-emitter saturation voltage.
Small-sized package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
15
V
VEBO
5
V
IC
500
mA
Icp
1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 15V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 2V , IC = 10mA
fT VCE = 2V , IC = 50mA
Cob VCB = 10V , f = 1.0MHz
IC = 5mA , IB = 0.5mA
VCE(sat)
IC = 200mA , IB = 10mA
VBE(sat) IC = 200mV , IB = 10mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
5
135 270
UT
6
200 400
7
300 600
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
135
600
300
MHz
4.0
pF
15 30 mV
160 300 mV
0.95 1.2 V
20
V
15
V
5
V
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