2SC4555 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
IC
Product specification
2SC4555
Features
Very small-sized package
Low collector-to-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
15
V
VEBO
5
V
IC
500
mA
ICP
1
A
PC
150
mW
Tj
105
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Testconditons
ICBO VCB = 15V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 2V , IC = 10mA
fT VCE = 2V , IC = 50mA
Cob VCB = 10V, f = 1MHz
IC = 5mA , IB = 0.5mA
VCE(sat)
IC = 200mA , IB = 10mA
VBE(sat) IC = 200mA , IB = 10mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
5
135 270
UT
6
200 400
7
300 600
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
135
600
300
MHz
4.0
pF
30 V
160 300
0.95 1.2 V
20
V
15
V
5
V
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