2SC4541 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Product specification
2SC4541
Features
Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A)
High Speed Switching Time: tstg = 0.5ìs(typ.)
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SA1736
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Base Current
IB
0.6
A
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on a ceramic substrate (250 mm² x 0.8 t)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = 80V , IE = 0
IEBO VEB = 6V , IC = 0
V(BR)CEO IC = 10mA , IB = 0
VCE = 2V , IC = 100mA
hFE
VCE = 2V , IC = 2A
VCE(sat) IC = 1.5A , IB = 75mA
VBE(sat) IC = 1.5A , IB = 75mA
fT VCE = 2V , IC = 100mA
Cob VCB = 10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
0.1 ìA
0.1 ìA
50
V
120
400
40
0.5 V
1.2 V
100
MHz
20
pF
0.1
0.5
ìs
0.1
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