2SC4499S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Triple Diffused

SMD Type
Transistors
Product specification
2SC4499S
Features
High speed and high voltage switching
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
TC=25
Junction temperature
Storage temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
500
V
VCEO
400
V
VEBO
10
V
ICP
0.5
A
IC
1
A
0.75
W
PC
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time
Storage time
Fall time
* 1 Pulse test.
Symbol
VCEO(sus)
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
VBE(sat)
ton
tstg
tf
Testconditons
IC = 0.1 A, RBE = ,L = 100 mH
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE =
VCE = 5 V, IC = 0.25 A*1
VCE = 5 V, IC = 0.5 A*1
IC = 0.25 A, IB = 0.05 A*1
IC = 0.25 A, IB = 0.05 A*1
IC = 0.5 A, IB1 = -IB2 = 0.1 A,
VCC= 150 V
Min Typ Max Unit
400
V
10
V
20
ìA
50
12
5
1.0 V
1.5 V
1.0 ìs
2 ìs
1.0 ìs
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4008-318-123
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