2SC4399 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Frequency General-Purpose Amp Applications

Product specification
2SC4399
Features
High power gain : PG=25dB typ (f=100MHz).
applied sets to be made small and slim.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
5
V
IC
30
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Reverse transfer capacitance
Base-collector time constant
Power gain
Noise figure
Symbol
Testconditons
ICBO VCB = 10V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 6V , IC = 1mA
fT VCE = 6V , IC = 1mA
Cre VCB = 6V, f = 1MHz
rbb'Cc VCB = 6V, IC= 1mA, f = 31.9MHz
PG VCB = 6V, IC= 1mA, f = 100MHz
NF VCB = 6V, IC= 1mA, f = 100MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
60
270
200 320
MHz
0.9 1.2 pF
12 20 ps
25
dB
3.0
dB
hFE Classification
Marking
Rank
hFE
3
60 120
F
4
90 180
5
135 270
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4008-318-123
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