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2SC4272 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – 27MHz CB Transceiver Driver Applications
Product specification
SOT-89-3L Plastic-Encapsulate Transistors
2SC4272 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z Large Current Capacity
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
75
45
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=40V,IE=0
VEB=4V,IC=0
VCE=5V, IC=500mA
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA
VCB=10V, IE=0, f=1MHz
Min Typ
75
45
5
60
180
15
Max
1
1
320
0.6
1.2
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
D
60–120
E
100–200
CH
F
160-320
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