2SC4253 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANER TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

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Product specification
2SC4253
Features
Good linearity of fT.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
4
V
IC
50
mA
IB
25
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Collector-base time constant
Transition frequency
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0
IEBO VEB = 3 V, IC = 0
V(BR)CEO IC = 1 mA, IB = 0
hFE VCE = 10 V, IC = 10 mA
VCE(sat) IC = 15 mA, IB = 1.5mA
VBE(sat) IC = 15 mA, IB = 1.5mA
Cob VCB = 10 V, IE = 0, f = 1MHz
Cc.rbb' VCB = 10 V, IC = 1mA, f = 30MHz
fT VCE = 10 V, IC = 10 mA
Min Typ Max Unit
0.1 ìA
0.1 ìA
25
V
20 70 200
0.2 V
1.5 V
1.1 1.6 pF
25 ps
250 600
MHz
Marking
Marking
HH
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