2SC4249 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV VHF RF AMPLIFIER APPLICATIONS)

SSMMDD TTyyppee
TTrraannssIiiCssttIoIoCCrrss
Product specification
2SC4249
Features
High gain: Gpe = 24dB (typ.) (f = 200 MHz)
Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
Excellent forward AGC characteristics
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
30
V
VEBO
3
V
IC
20
mA
IB
10
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Power gain
Noise figure
AGC voltage
Symbol
Testconditons
ICBO VCB = 25 V, IE = 0
IEBO VEB = 2 V, IC = 0
V(BR)CEO IC = 1 mA, IB = 0
hFE VCE = 10 V, IC = 2 mA
Cre VCB = 10 V, IE = 0, f = 1 MHz
fT VCE = 10 V, IC = 2 mA
Gpe
VCC = 12 V, VAGC = 1.4 V,f = 200 MHz
NF
VAGC VCC = 12 V, GR = 30dB, f = 200 MHz
Min Typ Max Unit
100 nA
100 nA
30
V
60 150 300
0.35 0.5 pF
400 650
MHz
20 24 28 dB
2.0 3.2 dB
3.6 4.4 5.1 V
Marking
Marking
HD
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1