2SC4226 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

SMD Type
Features
Low noise and high gain.
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
High gain.
|S21e|² = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
20
12
3.0
100
150
150
-65 to +150
TransistIoCrs
Product specification
2SC4226
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit
V
V
V
mA
mW
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
1 Emitter
2^{1 E}B^mita^terse
2 Base
3^{3 C}C^olleo^ctoll^recotr
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW 350
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
hFE VCE = 3V, IC = 7 mA
S21e ² VCE = 3V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre VCB = 3 V, IE = 0 , f = 1 MHz
fT
VCE =3V, IC = 7 mA
s, Duty Cycle 2%.
hFE Classification
Marking
Rank
hFE
R23
R23
40 80
R24
R24
70 140
R25
R25
125 250
Min Typ Max Unit
1.0
A
1.0
A
40 110 250
7
9
dB
1.2 2.5 dB
0.7 1.5 pF
3.0 4.5
GHz
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