2SC4181A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Epitaxia

SMD Type
TransistIoCrs
Product specification
2SC4181A
Features
High DC current gain:Hfe=1000 to 3200
Low VCE(sat): VCE(sat)=0.07v TYP
High VEBO: VEBO=15V
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
15
V
IC
150
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
L15
1000 2000
L16
1600 3200
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 5.0V , IC = 1.0mA
VBE VCE = 5.0V , IC = 1.0mA
VCE(sat) IC = 50mA , IB = 5.0mA
VBE(sat) IC = 50mA , IB = 5.0mA
fT VCE = 5.0V , IE = -10mA
Cob VCB = 5.0V , IE = 0, f = 1.0MHz
ton VCC = 10V, VBE(off) = -2.7V
tstg IC = 150mA ,
toff IB1 = -IB2 = 15mA
Min Typ Max Unit
100 nA
100 nA
1000 1800 3200
0.56
V
0.07 0.3 V
0.8 1.2 V
250
MHz
3.0
pF
0.13
ns
0.72
ns
1.22
ns
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