2SC4180 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
TransistIoCrs
Product specification
2SC4180
Features
Small dimension
High DC current gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
50
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = 120V, IE=0
IEBO VEB = 5V, IC=0
VCE = 6V , IC = 1mA*
hFE
VCE = 6V , IC = 0.1mA
VCE(sat) IC = 10mA , IB = 1mA
VBE VCE =6V , IC = 1mA
fT VCE = 6V , IE = -1mA
Cob VCB = 30V , IE = 0 , f = 1.0MHz
hFE Classification
Marking
hFE
D15
135 270
D16
200 400
D17
300 600
D18
450 900
Min Typ Max Unit
0.05 ìA
0.05 ìA
135 600 900
100 580
0.07 0.3 V
0.55 0.59 0.65 V
50 110
MHz
1.6 2.5 pF
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