2SC4179 Datasheet, PDF (1/1 Pages) NEC – FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
TransistIoCrs
Product specification
2SC4179
Features
High gain bandwidth product.
Low output capacitance.
Low noise figure.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
30
V
VEBO
5
V
IC
50
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
Min
ICBO VCB = 50V, IE=0
IEBO VEB = 5V, IC = 0
hFE VCE = 6V , IC = 1.0mA
60
VBE VCE = 6V , IC = 1.0mA
0.65
VCE(sat) IC = 10mA, IB = 1.0mA
fT VCE = 6V, IE = -1.0mA
150
Cob VCE = 6V, IE = 0, f = 1MHz
Cc'rb'b VCB = 6V , IE = -10mA , f = 31.9MHz
NF
VCE = 6V , IE = -1.0mA , Rg = 500Ù, f =
1.0MHz
Typ
100
0.70
0.08
250
1.9
10
2
Max
0.1
0.1
180
0.75
0.3
2.2
15
4
Unit
ìA
ìA
V
V
MHz
pF
ps
dB
hFE Classification
Marking
hFE
FA3
60 120
FA4
90 180
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