2SC4178 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
TransistIoCrs
Product specification
2SC4178
Features
Micro package.
High gain bandwidth product.
Low output capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
4
V
IC
20
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = 30V, IE=0
100 nA
hFE VCE = 6V , IC = 1.0mA
40 90 180
VCE(sat) IC = 10mA , IB = 1.0mA
0.1 0.3 V
fT VCE = 6V , IE = -1.0mA
400 600
MHz
Cob VCE = 6V , IE = 0, f = 1MHz
1.0
pF
Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz
12
ps
NF
VCE = 6V , IE = -1.0mA , Rg = 50Ù, f =
100MHz
3
dB
hFE Classification
Marking
hFE
F12
40 80
F13
60 120
F14
90 180
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1