2SC4117 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Product specification
2SC4117
Features
High voltage
High hFE
Low noise
Small package
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
100
mA
IB
20
mA
PC
100
mW
Tj
125
Tstg
-55 to +125
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Testconditons
ICBO VCB = 120 V, IE = 0
IEBO VEB = 5 V, IC = 0
hFE VCE =6 V, IC = 2 mA
VCE (sat) IC = 10 mA, IB = 1 mA
fT VCE = 6 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
NF VCE=6 V, IC=0.1 mA, f=1kHz,RG=10 K
Min Typ Max Unit
0.1 ìA
0.1 ìA
200
700
0.3 V
100
MHz
3.0
pF
1.0 10 dB
hFE Classification
Marking
Rank
hFE
DG
GR
200 400
DL
BL
350 700
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