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2SC4115S Datasheet, PDF (1/1 Pages) Rohm – Low Frequency Transistor (20V, 3A)
Product specification
TO-92S Plastic-Encapsulate Transistors
2SC4115S TRANSISTOR (NPN)
FEATURES
z Low VCE(sat).
z Excellent Current Gain Characteristics.
z Complements The 2SA1585S.
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
6
3
300
417
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)*
Cob
fT
Test conditions
IC=0.05mA,IE=0
IC=1mA,IB=0
IE=0.05mA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=2V, IC=100mA
IC=2A,IB=0.1A
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=0.5A, f=100MHz
Min Typ Max Unit
40
V
20
V
6
V
0.1 μA
0.1 μA
120
560
0.5 V
25
pF
290
MHz
CLASSIFICATION OF hFE
RANK
Q
RANGE
120-270
R
180-390
S
270-560
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