2SC3929 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

SMD Type
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
TransistIoCrs
Product specification
2SC3929
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
35
V
VCEO
35
V
VEBO
5
V
IC
50
mA
ICP
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base-emitter voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
Testconditons
Min Typ Max Unit
VCBO IC = 10 ìA, IE = 0
35
V
VCEO IC = 2 mA, IB = 0
35
V
VEBO IE = 10 ìA, IC = 0
5
V
VBE VCE = 1 V, IC = 100 mA
0.7 1.0 V
ICBO VCB = 10 V, IE = 0
0.1 ìA
ICEO VCE = 10 V, IB = 0
1 ìA
hFE VCE = 5 V, IC = 2 mA
180
700
VCE(sat) IC = 100 mA, IB = 10 mA
0.6 V
fT VCB = 5 V, IE = ?2 mA, f = 200 MHz
100
MHz
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg
= 100 kÙ, Function = FLAT
150 mV
hFE Classification
Marking
hFE
SR
180 360
SS
260 520
ST
360 700
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1