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| 2SC3807 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications | |||
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Product specification
TO-126C Plastic-Encapsulate Transistors
2SC3807 TRANSISTOR (NPN)
FEATURES
z Large Current Capacity
z High DC Current Gain
z Low Collector-Emitter Saturation Voltage
APPLICATIONS
z Low Frequency General Purpose Amplifier
TO â 126C
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
15
2
1.2
104
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=20V,IE=0
VEB=10V,IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=1A
IC=1A,IB=20mA
IC=1A,IB=20mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
30
V
25
V
15
V
0.1 μA
0.1 μA
800
3200
600
0.5
V
1.2
V
27
pF
260
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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