2SC3736 Datasheet, PDF (1/1 Pages) NEC – HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Features
High speed,high voltage switching.
Low collector saturation voltage.
Product specification
2SC3736
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)*
Total power dissipation
Junction temperature
Storage temperature
* PW 10ms,duty cycle 50%.
Symbol
Rating
Unit
VCBO
80
V
VCEO
45
V
VEBO
5
V
IC
1
A
ICP
2
A
PT
2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 45V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 10V , IC = 50mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
fT VCE = 10V , IE = -100mA
Cob VCB = 10V , IE = 0, f = 1.0MHz
ton
tstg IC = 500mA , IB1 = IB2 = 50mA
toff
Min Typ Max Unit
0.5 nA
0.5 nA
60
200
0.17 0.4 V
0.9 1.2 V
300 380
MHz
6.7 10 pF
20 40 ns
55 80 ns
72 100 ns
hFE Classification
Marking
hFE
OL
60 120
OK
100 200
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