2SC3734 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Product specification
2SC3734
Features
High speed : tstg 200ns.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25 ambient temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
200
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
B22
75 150
B23
100 200
Symbol
Testconditons
ICBO VCB = 30V, IE=0
IEBO VEB = 3V, IC=0
hFE VCE = 1V , IC = 10mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 20V , IE = -10mA
Cob VCB = 5V , IE = 0 , f = 1.0MHz
ton VCC = 3V ,
tstg IC = 10mA ,
toff IB1 = -IB2 = 1mA
B24
150 300
Min Typ Max Unit
100 nA
100 nA
75 200 300
0.12 0.3 V
0.8 0.95 V
300 510
MHz
3.0 4.0 pF
70 ns
100 200 ns
250 ns
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