2SC3663 Datasheet, PDF (1/1 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

SMD Type
TransistIoCrs
Product specification
2SC3663
Features
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
15
V
VCEO
8
V
VEBO
2
V
IC
5
mA
PT
50
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
Associated Power Gain
Collector Capacitance
Symbol
Testconditons
ICBO VCB = 5 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 1 V, IC = 250 PA, pulse
fT VCE = 1 V, IC = 1 mA
|S21e|² VCE = 1 V, IC = 1 mA, f = 1 GHz
MAG VCE = 1 V, IC = 1 mA, f = 1 GHz
NF VCE = 1 V, IC = 250 ìA, f = 1.0 GHz
GA VCE = 1 V, IC = 250 ìA, f = 1.0 GHz
C
VCB = 1 V, IE = 0, f = 1.0 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
50 100 250
4
GHz
4.0 6.5
dB
12.5
dB
3.0 4.5 dB
3.5
dB
0.4 0.6 pF
Marking
Marking
R62
http://www.twtysemi.com
[e-mail]
4008-318-123
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